IEEE

A 0.8-V Resistor-Based Temperature Sensor in 65-nm CMOS With Supply Sensitivity of 0.28 °C/V

Abstract: A 0.8-V resistor-based CMOS temperature sensor in 65-nm CMOS process with low supply sensitivity is presented. The temperature-to-voltage conversion gain is maximized by utilizing two types ...
C&EN

Tetrahedral Ordering in Water: Raman Profiles and Their Temperature Dependence

Dipartimento di Chimica, Università di Perugia, Via Elce di Sotto, 8, I-06123 Perugia, Italy, and IQTCUB, Departament de Química Física, Universitat de Barcelona, Barcelona, Spain †Part of the ...
C&EN

Nanostructure-free Metal–Dielectric Stacks for Raman Scattering Enhancement and Defect Identification in CVD-Grown Tungsten Disulfide (2H-WS

Article Views are the COUNTER-compliant sum of full text article downloads since November 2008 (both PDF and HTML) across all institutions and individuals. These metrics are regularly updated to ...
IEEE

A High Temperature Sensor Based on Sapphire Fiber Fabry-Perot Interferometer

Abstract: A sapphire fiber high temperature sensor based on Fabry-Perot interference was studied in the paper. A sapphire wafer served as the Fabry-Perot cavity was fixed to the end face of the ...