To achieve EV potential by squeezing more functionality into a given volume, and delivering value at a compelling price point ...
Abstract: A 0.8-V resistor-based CMOS temperature sensor in 65-nm CMOS process with low supply sensitivity is presented. The temperature-to-voltage conversion gain is maximized by utilizing two types ...
Abstract: A sapphire fiber high temperature sensor based on Fabry-Perot interference was studied in the paper. A sapphire wafer served as the Fabry-Perot cavity was fixed to the end face of the ...
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