Abstract: Temperature dependent high forward current stress induced drift of electrical parameters (current gain (β) variations, emitter resistance (RE) decrease) in polysilicon emitter bipolar ...
Wuhan High Magnetic Field Center and School of Electrical and Electronic Engineering, Huazhong University of Science and Technology, Wuhan 430074, China ...
Abstract: The channel in a resonant gate transistor (RGT) transduces the resonator’s mechanical movement into electrical signals. The device finds its application in acoustic sensing as a ...
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