“Indium oxide contains oxygen-vacancy defects, which facilitate carrier scattering and thus lower device stability,” says ...

Quantum Science, a UK-based maker of infrared quantum dot (QD) materials, took centre stage at the UK's National Physical ...

Japan's National Institute of Information and Communications Technology (NICT) in collaboration with Sony Semiconductor has ...

After setting fundamental and harmonic impedance to power-added-efficiency matching conditions, Ohki and co-workers ...

Swiss innovation centre CSEM, in collaboration with Dutch deep-tech startup QDI Systems, has developed what is claimed to be ...

Compound semiconductor firm WIN Semiconductors has launched a 0.12 μm gate-length D-mode GaN HEMT technology on SiC ...

Navitas Semiconductor has announced a partnership with BrightLoop supporting their latest series of hydrogen fuel-cell ...

Under the collaboration, Soitec will supply PSMC 300mm substrates incorporating a release layer, Transistor Layer Transfer ...

French MBE firm Riber has announced the sale of an MBE 412 research system to an Asian university institute. The university ...

The Fraunhofer IAF process simplifies the production with a MOEMS (micro-opto-electro-mechanical system) grating scanner in ...

TrendForce adds that while Renesas has reportedly decided to halt in-house production of SiC power chips, the company does ...