Diodes Inc. is delivering increased power density and efficiency of power management circuits with the introduction of its 20 V NPN and PNP bipolar transistors packed in a DFN1411-3 surface mount ...
Dubbed BiCOM-III, TI's recently announced silicon-germanium (SiGe) complementary bipolar-CMOS manufacturing process integrates both NPN- and PNP-type bi-polar transistors. The result of this ...
Recently in material science news from China we hear that [Hailin Peng] and his team at Peking University just made the world’s fastest transistor and it’s not made of silicon. Before we tell you ...
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