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SemiQ has created a line of 1,200V SiC mofet SOT-227 modules with Rds(on) at 7.4. 15 or 34mΩ. There are six models, half have ‘GCMX’ part numbers and just have a mosfet, while the others, GCMS types, ...
ROHM has developed an innovative Schottky barrier diode that overcomes the traditional VF/IR trade-off. This way, it delivers high reliability protection for a wide range of high-resolution image ...
These new Schottky diodes enable high-efficiency power conversion in energy-intensive AI server farms. Nexperia has introduced two new 1200 V, 20 A silicon carbide (SiC) Schottky diodes—PSC20120J and ...
Vishay Intertechnology, Inc. has announced the launch of three new Gen 3 650 V and 1200 V silicon carbide Schottky diodes, specifically the VS-3C01EJ12-M3, VS-3C02EJ07-M3, and VS-3C02EJ12-M3, which ...
The new planar Schottky diodes provide superior heat dissipation while still maintaining small footprint. Nexperia has announced the introduction of 16 new low forward voltage (VF) optimized planar ...
Abstract: SiC has a higher critical electric field compared to Si, which is promising for power applications. However, the susceptibility of SiC Schottky barrier diodes (SBDs) to heavy ions is ...
Infineon Technologies AG has introduced the world’s first gallium nitride (GaN) power transistors with integrated Schottky diode for industrial use. The product family of medium-voltage CoolGaN ...