Carbon nanotubes (CNTs), cylindrical nanostructures made of carbon atoms arranged in a hexagonal lattice, have proved to be ...

In 1947, Shockley, Brattain and Bardeen were investigating the field effect transistor but lead them into inventing the bipolar transistor instead. In 1952, the field effect transistor of Shockley was ...

This course presents in-depth discussion and analysis of metal-oxide-semiconductor field-effect transistors (MOSFETs) and bipolar junction transistors (BJTs) including the equilibrium characteristics, ...

To meet the growing demands of flexible and wearable electronic systems, such as smart watches and biomedical sensors, ...

Field-effect transistors (FETs) are the cornerstone of modern electronic devices, providing the essential functionality for digital logic, analog processing and power management. The fundamental ...

Today’s electronic devices are powered by transistors, which are tiny silicon structures that rely on negatively charged electrons moving through the silicon, forming an electric current. In recent ...

“Ferroelectric field-effect transistors employ a ferroelectric material as a gate insulator, the polarization state of which can be detected using the channel conductance of the device. As a result, ...

Beyond-silicon technology demands ultra-high-performance field-effect transistors (FETs). Transition metal dichalcogenides (TMDs) provide an ideal material platform, but the device performances such ...

Compare 3 process flows in terms of robustness to process variation to see which one has the lowest likelihood of processing failures. Sub-5 nm logic nodes will require an extremely high level of ...